Simplified Simulation Of Analog
Electronic Circuits.
The (floating) admittance (inverse impedence) matrix of a
circuit is best illustrated by an example: Figure I is a simple
resistive network. To avoid complication, in this particular
example, the nodes are arbitrarily numbered and node 0 is left
floating (unconnected.) However, this in general will not
be the case. Because charge is neither created nor consumed
inside a node, the total current into any node is zero.
Nevertheless, it is still useful to write down an expression for
them. If the currents (rather than the voltages) are the
dependent variables, and assuming linearity:
i1 = (v1-v2)y12 + (v1-v3)y13
i2 = (v2-v1)y21 + (v2-v3)y23
i3 = (v3-v1)y31 + (v3-v2)y32
or, rearranging, i = yv
[i1] |
|
|
[y12+y13 |
-y12 |
-y13] |
|
[v1] |
|
[i2] |
= |
|
[-y21 |
y21+ y23 |
-y23] |
x |
[v2] |
|
[i3] |
|
|
[-y31 |
-y32 |
y31 + y32] |
|
[v3] |
|
Now eliminate v3 from all higher equations by the substitution
v3 = ( v1y31 + v2y32 ) / (y31 + y32 ). (If more nodes had been
present, the additional voltages would have been eliminated
iteratively.) Hence, the circuit has been reduced to a two-port
network, figure II. If nodes 0, 1 and 2 are always the input,
output and earth nodes respectively, it can be shown that:
i0 = y00v0 + y01v1
i1 = y10v0 + y11v1
where ys is the source admittance, yL is the load admittance
and Dy = y00y11 - y10y01
The admittance matrix of any linear circuit can be formed by
inspection:
The matrix for a transistor is given below. For low frequency
work, yre and yoe are usually ignored. yfe is Ie (mA) / (25 mV)
approximately, so if (for example) Ie =1 mA, yfe is 1 / (25
Ohms), while yie is yfe / hfe ; therefore if, in addition, hfe =
300 yie = 1 / (300.25 Ohms) = 1 / (7500 Ohms). However, a good
design should not depend on the exact value of hfe.
|
B |
C |
E |
B |
yie |
yre |
-yie-yre |
C |
yfe |
yoe |
-yfe-yoe |
E |
-yie-yfe |
-yre-yoe |
s |
s being yie + yfe + yre + yoe
Notes:
- In signal terms, all power supply connections
are commoned. (This is not to say that the admittance matrix method cannot be used to
obtain the DC bias - the quiescent point- of a circuit. However, the transistor YFE is now IE (mA) / 650 milliVolts approximately
- for silicon bipolar transistors. Starting from a guess value, it will require a few iterations before the actual transistor current values are obtained. If more than one power supplies are used, they need to be considered one at a time, and the results combined using superposition.)
- Oscillators can be evaluated by breaking the loop. The
group delay d ( phase ) / dw will require a second
calculation very close to the frequency of interest.
- The steady- state time response to a non-
sinusoidal signal can be determined by splitting it to
its Fourier components and adding the corresponding
responses.
- Most circuits will contain some inductance or
capacitance, so some of the y parameters, gains and
two-port impedences will be compex numbers (frequency-
variable.) A procedure to reduce that matrix follows (for
the nodes numbered 0 to n% inclusive; yr is the real part
of the matrix, yi the imaginary, y =
yr +j yi .) Sparse matrix
techniques could be used to enhance processing and
storage.
FOR x% = n% TO 3 STEP -1:
a=yr(x%,x%)^2 +yi(x%,x%)^2:
b=yr(p%,x%)*yr(x%,q%)-yi(p%,x%)*yi(x%,q%):
c=yr(x%,q%)*yi(p%,x%)+yr(p%,x%)*yi(x%,q%):
yr(p%,q%) = yr(p%,q%)-(b*yr(x%,x%)+c*yi(x%,x%))/a:
yi(p%,q%)=yi(p%,q%)-(c*yr(x%,x%)-b*yi(x%,x%))/a:
Example: A very short (but also extremely thin) wire is intended to carry very high frequency signals. The distributed line resistance, Rd is 100 Ohms and the distributed line capacitance (to earth), Cd is 10 pF.
The load impedance is negligibly high, in comparison, and the nominal value of the corner frequency, ft is just under 160 MHz. The wire is modelled by a combination of lumped elements (whose number is variable), fig 2b. It does not look productive to use more than about 10 elements. The following graph shows the input impedence, zi, at 160 MHz, in modulus and argument form, against the number of elements used: 1 through 35 (the horizontal axis is logarithmic.)
Did you want to check calculations, or a subroutine, of your own? Using one element, at 160 Mhz, the voltage gain in deciBels is (20logAv) or -3.04 dB's and the phase angle is -46o (negative, since the current leads the voltage.) The input impedence is 141 Ohms at -44o (capacitive) and the output impedance is 70 Ohms/ -45o. For the sake of those calculations, the source impedance is negligibly low.
A word of caution is in order: Simulation does save tedious arithmetic, (especially if complex numbers are involved), and will reveal some of the obvious design errors (even to someone not conversant with analogue circuitry.) However, simulators provide data for all circuits, (including ones which are not good) and there is definitely more to analogue design than obtaining the proper figures from a simulator: For example, interference must be avoided, and a clever ground layout adopted when actually implementing the design on a pcb.
Reference: Wireless World magazine (British) Volume 86,
February issue, p.39